Dicing Tape　D series (UV Curable Dicing Tape) | Adwill:Semiconductor-related Products

We offer various tapes.

Dicing Tape （UV Curable Dicing Tape）

For Si Wafer Blade Dicing -Standard-

The indicated values are measured values and not intended for guarantee use.

		D-175D*	D-174D	D-485H
Tape Thickness(μm)		90	90	85
Appearance		Blue Opaque	Blue Opaque	Opaque
Structure	Base Film (μm)	PVC 80	PVC 80	PO 80
Structure	Adhesive (μm)	10	10	5
Adhesion^*1 (mN/25 mm)	Before UV	580	740	4900
Adhesion^*1 (mN/25 mm)	After UV^*2	80	80	80

*1 Peeling speed= 300 mm/min, Peeling angle= 180deg., Adherend: Si mirror wafer

*2 UV irradiation conditions UV ray intensity 230 mW/cm², UV ray dosage 190 mJ/cm² Wavelength of ultraviolet should be around 365 nm.

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For Si Wafer Blade Dicing -Easy Pick Up-

The indicated values are measured values and not intended for guarantee use.

		D-175D*	D-174D	D-485H	D-495H
Tape Thickness（μm）		90	90	85	85
Appearance		Blue Opaque	Blue Opaque	Opaque	Opaque
Structure	Base Film (μm)	PVC 80	PVC 80	PO 80	PO 80
Structure	Adhesive (μm)	10	10	5	5
Adhesion^*1 (mN/25 mm)	Before UV	580	740	4900	4900
Adhesion^*1 (mN/25 mm)	After UV^*2	80	80	80	80
Remark					Less Whisker

*1 Peeling speed= 300 mm/min, Peeling angle= 180deg., Adherend: Si mirror wafer

*2 UV irradiation conditions UV ray intensity 230 mW/cm², UV ray dosage 190 mJ/cm² Wavelength of ultraviolet should be around 365 nm.

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For Si Wafer Blade Dicing ‐Small Dies (<1 mm)‐

The indicated values are measured values and not intended for guarantee use.

		D-176D	D-171D	D-611H
Tape Thickness（μm）		90	90	85
Appearance		Blue Opaque	Blue Opaque	Opaque
Structure	Base Film (μm)	PVC 80	PVC 80	PO 80
Structure	Adhesive (μm)	10	10	5
Adhesion^*1 (mN/25 mm)	Before UV	920	5000	6300
Adhesion^*1 (mN/25 mm)	After UV^*2	190	200	720

*1 Peeling speed= 300 mm/min, Peeling angle= 180deg., Adherend: Si mirror wafer

*2 UV irradiation conditions UV ray intensity 230 mW/cm², UV ray dosage 190 mJ/cm² Wavelength of ultraviolet should be around 365 nm.

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For Si Wafer Blade Dicing -Less Whisker-

The indicated values are measured values and not intended for guarantee use.

		D-495H
Tape Thickness（μm）		85
Appearance		Opaque
Structure	Base Film (μm)	PO 80
Structure	Adhesive (μm)	5
Adhesion^*1 (mN/25 mm)	Before UV	4900
Adhesion^*1 (mN/25 mm)	After UV^*2	80

*1 Peeling speed= 300 mm/min, Peeling angle= 180deg., Adherend: Si mirror wafer

*2 UV irradiation conditions UV ray intensity 230 mW/cm², UV ray dosage 190 mJ/cm² Wavelength of ultraviolet should be around 365 nm.

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For PKG Blade Dicing -Standard-

The indicated values are measured values and not intended for guarantee use.

		D-510TC	D-511TC
Tape Thickness（μm）		170	170
Appearance		Opaque	Opaque
Structure	Base Film (μm)	PO 140	PO 140
Structure	Adhesive (μm)	30	30
Adhesion^*1 (mN/25 mm)	Before UV	22000	13000
Adhesion^*1 (mN/25 mm)	After UV^*2	900	120

*1 Peeling speed= 300 mm/min, Peeling angle= 180deg., Adherend: Si mirror wafer

*2 UV irradiation conditions UV ray intensity 230 mW/cm², UV ray dosage 190 mJ/cm² Wavelength of ultraviolet should be around 365 nm.

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For PKG Blade Dicing ‐Anti-ESD-

The indicated values are measured values and not intended for guarantee use.

		D-841	D-825	D-847W	D-846
Tape Thickness（μm）		150	150	160	150
Appearance		Opaque	Opaque	Opaque	Opaque
Structure	Base Film (μm)	PO 140	PO 140	PO 140	PO 140
Structure	Adhesive (μm)	10	10	20	10
Adhesion^*1 (mN/25 mm)	Before UV	25000	9700	17590	18900
Adhesion^*1 (mN/25 mm)	After UV^*2	50	100	90	40
Surface Resistance （Ω/□）^*3	Before UV	3.9×10¹¹	5.1×10¹⁰	3.6×10¹⁰	1.7×10¹¹
Surface Resistance （Ω/□）^*3	After UV^*2	3.9×10¹²	3.0×10¹¹	2.2×10¹¹	5.6×10¹¹
Surface Resistance （Ω/cm）^*3	Before UV	5.6×10¹⁴	5.4×10¹⁴	4.2×10¹⁴	7.8×10¹⁴
Surface Resistance （Ω/cm）^*3	After UV^*2	3.5×10¹⁵	7.9×10¹⁴	5.4×10¹⁴	2.0×10¹⁵
Charge Voltage in Above Process （V）^*4	Before UV	960	500	540	680
Charge Voltage in Above Process （V）^*4	After UV^*2	1260	610	900	840
Remark		Standard	For Green Compound PKG	For Metal Layer	For Glass

*1 Peeling speed= 300 mm/min, Peeling angle= 180deg., Adherend: Si mirror wafer

*2 UV irradiation conditions UV ray intensity 230 mW/cm², UV ray dosage 190 mJ/cm² Wavelength of ultraviolet should be around 365 nm.

*3 ADVANTEST DIGITAL ELECTROMETER R8252, applied voltage = 100V

*4 SHISHIDO ELECTROSTATIC, LTD. STATIC HONESTMETER Charging voltage = 10 kV

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For Glass/Ceramic Blade Dicing -Standard-

The indicated values are measured values and not intended for guarantee use.

		D-241	D-210NC	D-218
Tape Thickness（μm）		110	125	203
Appearance		Opaque	Opaque	Opaque
Structure	Base Film (μm)	PET 100	PET 100	PET 188
Structure	Adhesive (μm)	10	25	15
Adhesion^*1 (mN/25 mm)	Before UV	16000	29000	11880
Adhesion^*1 (mN/25 mm)	After UV^*2	50	200	280
Remark		Standard、Less Residue	For Small Chip	High Thickness

*1 Peeling speed= 300 mm/min, Peeling angle= 180deg., Adherend: Si mirror wafer

*2 UV irradiation conditions UV ray intensity 230 mW/cm², UV ray dosage 190 mJ/cm² Wavelength of ultraviolet should be around 365 nm.

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For Stealth Dicing^TM -Standard (Easy Pick Up)-

The indicated values are measured values and not intended for guarantee use.

		D-455H
Tape Thickness（μm）		75
Appearance		Transparent
Structure	Base Film (μm)	PO 70
Structure	Adhesive (μm)	5
Adhesion^*1 (mN/25 mm)	Before UV	6000
Adhesion^*1 (mN/25 mm)	After UV^*2	140
Transparency(%@1400 nm)		92
Haze(%)		3

*1 Peeling speed= 300 mm/min, Peeling angle= 180deg., Adherend: Si mirror wafer

*2 UV irradiation conditions UV ray intensity 230 mW/cm², UV ray dosage 190 mJ/cm² Wavelength of ultraviolet should be around 365 nm.

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For Stealth Dicing^TM -Standard (Anti-ESD)-

The indicated values are measured values and not intended for guarantee use.

		D-821HSD
Tape Thickness（μm）		85
Appearance		Transparent
Structure	Base Film (μm)	PVC 80
Structure	Adhesive (μm)	5
Adhesion^*1 (mN/25 mm)	Before UV	2400
Adhesion^*1 (mN/25 mm)	After UV^*2	320
Transparency(%@1400 nm)		92
Surface Resistance （Ω/□）^{^*3}	Before UV	5.1×10¹²
Surface Resistance （Ω/□）^{^*3}	After UV^*2	8.9×10¹²

*1 Peeling speed= 300 mm/min, Peeling angle= 180deg., Adherend: Si mirror wafer

*2 UV irradiation conditions UV ray intensity 230 mW/cm², UV ray dosage 190 mJ/cm² Wavelength of ultraviolet should be around 365 nm.

^*3: ADVANTEST DIGITAL ELECTROMETER R8252,applied voltage= 100 V

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For Full Cut Laser Dicing

The indicated values are measured values and not intended for guarantee use.

		D-765
Tape Thickness（μm）		130
Appearance		Opaque
Structure	Base Film (μm)	Special Elastomer 120
Structure	Adhesive (μm)	10
Adhesion^*1 (mN/25 mm)	Before UV	5200
Adhesion^*1 (mN/25 mm)	After UV^*2	130

*1 Peeling speed= 300 mm/min, Peeling angle= 180deg., Adherend: Si mirror wafer

*2 UV irradiation conditions UV ray intensity 230 mW/cm², UV ray dosage 190 mJ/cm² Wavelength of ultraviolet should be around 365 nm.

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For Plasma Dicing

The indicated values are measured values and not intended for guarantee use.

		D-485H	D-611
Tape Thickness（μm）		85	95
Appearance		Opaque	Opaque
Structure	Base Film (μm)	PO 80	PO 80
Structure	Adhesive (μm)	5	15
Adhesion^*1 (mN/25 mm)	Before UV	4900	12300
Adhesion^*1 (mN/25 mm)	After UV^*2	50	690
25% Strength (N/10 mm)^{^*3}	MD/CD	7.8 / 6.9	7.8 / 6.9
Tensile Strength （MPa）^{^*3}	MD/CD	33.3/ 27.5	33.3 / 27.5
Elongation（％）^{^*3}	MD/CD	450/ 500	450/ 500

*1 Peeling speed= 300 mm/min, Peeling angle= 180deg., Adherend: Si mirror wafer

*2 UV irradiation conditions UV ray intensity 230 mW/cm², UV ray dosage 190 mJ/cm² Wavelength of ultraviolet should be around 365 nm.

^*3 Tensile speed = 200 mm/min, Sample size = 15 mm × 100 mm

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Others -Solvent Resistant-

The indicated values are measured values and not intended for guarantee use.

		D-458J
Tape Thickness（μm）		85
Appearance		Transparent
Structure	Base Film (μm)	PO 70
Structure	Adhesive (μm)	15
Adhesion^*1 (mN/25 mm)	Before UV	8200
Adhesion^*1 (mN/25 mm)	After UV^*2	50

*1 Peeling speed= 300 mm/min, Peeling angle= 180deg., Adherend: Si mirror wafer

*2 UV irradiation conditions UV ray intensity 230 mW/cm², UV ray dosage 190 mJ/cm² Wavelength of ultraviolet should be around 365 nm.

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Others -Heat Resistant-

The indicated values are measured values and not intended for guarantee use.

		D-435T
Tape Thickness（μm）		110
Appearance		Opaque
Structure	Base Film (μm)	PO 80
Structure	Adhesive (μm)	30
Adhesion^*1 (mN/25 mm)	Before UV	11400
Adhesion^*1 (mN/25 mm)	After UV^*2	40
Heating +After UV^*2		400
Resistance Temperature（℃）		~140

*1 Peeling speed= 300 mm/min, Peeling angle= 180deg., Adherend: Si mirror wafer

*2 UV irradiation conditions UV ray intensity 230 mW/cm², UV ray dosage 190 mJ/cm² Wavelength of ultraviolet should be around 365 nm.

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"Stealth Dicing^TM" is trademark of Hamamatsu Photonics K.K.

Dicing Tape （UV Curable Dicing Tape）

For Si Wafer Blade Dicing -Standard-

For Si Wafer Blade Dicing -Easy Pick Up-

For Si Wafer Blade Dicing ‐Small Dies (<1 mm)‐

For Si Wafer Blade Dicing -Less Whisker-

For PKG Blade Dicing -Standard-

For PKG Blade Dicing ‐Anti-ESD-

For Glass/Ceramic Blade Dicing -Standard-

For Stealth DicingTM -Standard (Easy Pick Up)-

For Stealth DicingTM -Standard (Anti-ESD)-

For Full Cut Laser Dicing

For Plasma Dicing

Others -Solvent Resistant-

Others -Heat Resistant-

For questions or estimations about semiconductor related products, please feel free to contact us.

For Stealth Dicing^TM -Standard (Easy Pick Up)-

For Stealth Dicing^TM -Standard (Anti-ESD)-